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Introduction To FF300R07KE4Source： Release Date：2026/6/8 Click On：1Ⅰ.Overview of FF300R07KE4FF300R07KE4 is a high-performance trench field-stop IGBT module developed by Infineon Technologies. It features dual independent channel configuration, excellent electrical performance and high o...
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BC807-25-AUSource： Release Date：2025/11/20 Click On：24Ⅰ.Overview of BC807-25-AUThe BC807-25-AU is a surface-mount PNP bipolar junction transistor (BJT) manufactured by Panjit International Inc., designed for general-purpose switching and amplification applications. Complian...
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BCX51-16,135Source： Release Date：2025/11/18 Click On：18Ⅰ.Overview of BCX51-16,135The BCX51-16,135 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. Classified under discrete semiconductor products, it is engineered for reliable swi...
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SBC857BLT1GSource： Release Date：2025/11/10 Click On：15Ⅰ.Overview of SBC857BLT1GThe SBC857BLT1G is a high-performance PNP single bipolar transistor (BJT) developed by onsemi, categorized under discrete semiconductor products. Designed for surface-mount applications, it meets...
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PBSS4260PANP,115Source： Release Date：2025/11/7 Click On：10Ⅰ.Overview of PBSS4260PANP,115PBSS4260PANP,115 is a bipolar transistor array belonging to discrete semiconductor products, integrating 1 NPN and 1 PNP transistor. It is designed for high-performance electronic applicatio...
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IHW40N135R5XKSA1Source： Release Date：2025/8/22 Click On：23Ⅰ.Overview of IHW40N135R5XKSA1The IHW40N135R5XKSA1 is a high-performance single IGBT (Insulated Gate Bipolar Transistor) belonging to the discrete semiconductor products category, specifically designed under Infineon Tec...
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GT50J325: Characteristics And Applications Of High-Performance IGBTSource： Release Date：2025/6/25 Click On：26I. Chip IntroductionThe GT50J325 is a high-performance insulated gate bipolar transistor (IGBT) produced by TOSHIBA. The following are the basic parameter information of the GT50J325 chip:Encapsulation: TO-3PLCollector d...
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