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SBC857BLT1G

Auth: Date:2025/11/10 Source:WECHIP Visit:15 Related Key Words: collector-emitter stability fluctuation space-saving amplifier

.Overview of SBC857BLT1G

The SBC857BLT1G is a high-performance PNP single bipolar transistor (BJT) developed by onsemi, categorized under discrete semiconductor products. Designed for surface-mount applications, it meets AEC-Q101 qualification standards, making it suitable for automotive and industrial environments requiring reliability and stability across a wide temperature range.

 

.SBC857BLT1G Parameter

Category:Discrete Semiconductor Products,Transistors,Bipolar (BJT),Single Bipolar,Transistors

Mfr:onsemi

Packaging:Tape & Reel (TR)

Part Status:Active

Transistor Type:PNP

Current - Collector (Ic) (Max):100 mA

Voltage - Collector Emitter Breakdown (Max):45 V

Current - Collector Cutoff (Max):15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V

Power - Max:300 mW

Frequency - Transition:100MHz

Operating Temperature:-55°C ~ 150°C (TJ)

Qualification:AEC-Q101

Mounting Type:Surface Mount

Package / Case:TO-236-3, SC-59, SOT-23-3

 

.SBC857BLT1G Main Characteristics

High Current Gain:Features a minimum DC current gain (hFE) of 220 at 2 mA collector current and 5 V collector-emitter voltage, ensuring efficient signal amplification and switching performance.

Wide Operating Voltage Range:Boasts a maximum collector-emitter breakdown voltage of 45 V, providing robust operation in medium-voltage circuits.

Low Leakage Current:Exhibits a maximum collector cutoff current (ICBO) of 15 nA, reducing power consumption and improving circuit stability during standby or low-load conditions.

High Transition Frequency:Supports a transition frequency of 100 MHz, enabling reliable performance in high-frequency signal processing and switching applications.

Automotive-Grade Qualification:Complies with AEC-Q101 standards, ensuring durability and reliability in harsh automotive environments (temperature extremes, vibration, voltage fluctuations).

Compact Surface-Mount Package:Available in TO-236-3/SC-59/SOT-23-3 packages, facilitating space-saving designs in dense circuit layouts.

Broad Temperature Tolerance:Operates within a wide temperature range of -55°C to 150°C (junction temperature),suitable for extreme industrial and automotive operating conditions.

 

.SBC857BLT1G Application 

Signal Amplification:Ideal for low-power audio amplifiers, sensor signal amplifiers, and small-signal processing circuits in consumer electronics (e.g., portable devices, home appliances).

Switching Circuits:Employed as a switching transistor in low-to-medium current applications, such as relay drivers, LED drivers, and power supply control circuits.

Industrial Controls:Suitable for industrial automation systems, sensor modules, and process control circuits requiring stable operation across wide temperature and voltage ranges.

Consumer Electronics:Integrated into smartphones, tablets, and wearable devices for signal switching, battery management, and low-power circuit control.

Communication Equipment:Used in low-frequency radio circuits, Bluetooth modules, and wireless communication devices, benefiting from its 100 MHz transition frequency.

Medical Devices:Applied in low-power medical sensors and monitoring equipment, where low leakage current and compact size are critical.


.Conclusion

The SBC857BLT1G is a versatile PNP bipolar transistor that combines high current gain, low leakage, and automotive-grade reliability, making it a preferred choice for automotive, industrial, and consumer electronics applications.

 


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