IHW40N135R5XKSA1

Ⅰ.Overview of IHW40N135R5XKSA1

The IHW40N135R5XKSA1 is a high-performance single IGBT (Insulated Gate Bipolar Transistor) belonging to the discrete semiconductor products category, specifically designed under Infineon Technologies' TRENCHSTOP™ series. As an active component, it is packaged in a tube and features a through - hole mounting type, making it suitable for various industrial and power electronic applications that demand reliable and efficient power switching. Its advanced trench field stop IGBT type ensures optimized performance in terms of voltage handling, current carrying capacity, and thermal management.

Ⅱ.IHW40N135R5XKSA1 Parameter

Category:Discrete Semiconductor Products,Transistors,IGBTs,Single IGBTs

Manufacturer:Infineon Technologies

Series:TRENCHSTOP™

Packaging:Tube

Part Status:Active

IGBT Type:Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):1350 V

Current - Collector (Ic) (Max):80 A

Current - Collector Pulsed (Icm):120 A

Power - Max:394 W

Gate Charge:305 nC

Test Condition:600V, 40A, 10Ohm, 15V

Operating Temperature:-40°C ~ 175°C (TJ)

Mounting Type:Through Hole

Ⅲ.IHW40N135R5XKSA1 Main Characteristics

High Voltage Handling:With a maximum collector-emitter breakdown voltage of 1350 V, it can effectively operate in high-voltage power electronic circuits, ensuring stable performance even in demanding voltage environments.

Strong Current Capacity:The maximum collector current (Ic) of 80 A and pulsed collector current (Icm) of 120 A allow it to handle large current loads, making it suitable for applications requiring high power output.

Trench Field Stop Technology:This advanced IGBT type enhances the device's switching speed and reduces switching losses, improving overall efficiency in power conversion systems.

Wide Operating Temperature Range:Functioning within -40°C to 175°C (TJ), it exhibits excellent thermal stability, enabling reliable operation in extreme temperature conditions, such as industrial environments with significant temperature fluctuations.

Through - Hole Mounting:The through-hole mounting type provides secure and stable installation, facilitating easy integration into printed circuit boards (PCBs) and ensuring good mechanical strength.

Specified Gate Charge:A gate charge of 305 nC (under test conditions of 600V, 40A, 10Ohm, 15V) ensures proper gate control, contributing to precise switching operations.

Ⅳ.IHW40N135R5XKSA1 Application 

Industrial Motor Drives:Due to its high current and voltage handling capabilities, it is ideal for use in variable frequency drives (VFDs) for industrial motors, enabling efficient speed control and power regulation.

Power Inverters:It can be employed in power inverter systems that convert direct current (DC) to alternating current (AC), such as those used in renewable energy systems (solar, wind) and uninterruptible power supplies (UPS).

Welding Equipment:The device's ability to handle high power and pulsed currents makes it suitable for welding machines, where stable and controlled power delivery is crucial for quality welding results.

Induction Heating Systems:In induction heating applications, it helps in generating and controlling the high - frequency currents required for heating, leveraging its efficient switching characteristics.

HVAC Systems:It can be used in large-scale heating, ventilation, and air conditioning (HVAC) systems to manage the power flow in compressors and other high - power components, ensuring energy - efficient operation.

Ⅴ.Conclusion

The IHW40N135R5XKSA1, as a single IGBT from Infineon Technologies' TRENCHSTOP™ series, stands out with its impressive combination of high voltage handling, strong current capacity, advanced trench field stop technology, and wide operating temperature range. Its through - hole mounting design adds to its ease of integration. These features make it a versatile and reliable component, well - suited for a range of applications including industrial motor drives, power inverters, welding equipment, induction heating systems, and HVAC systems. With its active status and robust performance parameters, it continues to be a valuable choice in the field of discrete semiconductor products for power electronic applications.