Home > Industry Information > Introduction To PSMN1R9-80SSEJ
PSMN1R9-80SSEJ is a single N-channel MOSFET manufactured by Nexperia USA Inc., belonging to discrete semiconductor transistor products. It features low on-resistance and high power endurance, and is currently in active mass production status.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Vgs(th) (Max) @ Id:3.6V @ 1mA
Mfr:Nexperia USA Inc.
Gate Charge (Qg) (Max) @ Vgs:232 nC @ 10 V
Packaging:Tape & Reel
Vgs (Max):±20V
Part Status:Active
Input Capacitance (Ciss) (Max) @ Vds:17140 pF @ 40 V
FET Type:N-Channel
Power Dissipation (Max):340W (Tc)
Technology:MOSFET (Metal Oxide)
Operating Temperature:-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss):80 V
Mounting Type:Surface Mount
Current - Continuous Drain (Id) @ 25°C:286A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Package / Case:SOT-1235
Rds On (Max) @ Id, Vgs:1.9mOhm @ 25A, 10V
Low Resistance:The device achieves an ultra-low maximum on-resistance of 1.9mOhm under 25A and 10V working conditions, which effectively reduces conduction loss and improves energy utilization efficiency during operation.
High Current:It supports a continuous drain current of up to 286A at 25°C, with strong overcurrent bearing capacity, meeting the high-current working demands of power electronic equipment.
High Power:Featuring a maximum power dissipation of 340W, it has excellent power endurance and can operate stably in high-power load scenarios for a long time.
Stable Voltage:It has a drain-source withstand voltage of 80V and a gate-source voltage tolerance of ±20V, with good voltage resistance and stable working reliability.
Fast Switching:With a controllable gate charge of 232 nC and moderate input capacitance, it possesses excellent switching performance and can adapt to high-frequency switching working environments.
Compact Mount:Adopting SOT-1235 surface mount package and tape & reel packaging, it is suitable for automated SMT production and saves PCB layout space.
Power Conversion:Applied to high-current DC-DC step-down and step-up converters in server power supplies, reducing power loss during voltage conversion and improving power supply conversion efficiency.
Motor Drive:Used in low-voltage high-current brushless DC motor drive modules of industrial automation equipment, providing stable current output for motor operation.
Battery Management:Deployed in battery protection and discharge control circuits of new energy storage devices, realizing efficient switch control of battery high-current loops.
UPS Power:Applied to uninterruptible power supply switching circuits, undertaking high-current power switching work to ensure stable power output of UPS equipment.
Charging Module:Used in high-power fast charging modules of industrial equipment and electric vehicles, adapting to high-current charging and switching working conditions.
Industrial Control:Applied to high-current load switching circuits of industrial power distribution equipment, ensuring reliable on-off control of high-power loads.
PSMN1R9-80SSEJ is a high-performance N-channel MOSFET with low on-resistance,high current and high power characteristics, showing excellent comprehensive electrical performance.It is highly suitable for high-current and high-efficiency power electronic scenarios,with wide application value in industrial power supply and energy control fields.
Industry Information
