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The PSMN4R8-100BSEJ is a high-performance N-channel power MOSFET manufactured by Nexperia USA Inc., utilizing advanced trench gate technology. This device features a drain-to-source breakdown voltage (Vdss) of 100V, very low on-state resistance (Rds(on)), and a continuous drain current capability of up to 120A. Its excellent switching characteristics and thermal performance make it an ideal choice for applications such as high-power-density switching power supplies, motor drives, and high-current load switching.
Category:Discrete Semiconductor Products;Transistors;FETs, MOSFETs;Single FETs, MOSFETs
Mfr:Nexperia USA Inc.
Packaging:Tape & Reel (TR);Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:278 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14400 pF @ 50 V
Power Dissipation (Max):405W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number:PSMN4R8
Extremely Low On-Resistance: With a typical on-state resistance of only 4.8mΩ at 10V Vgs, it significantly reduces conduction losses and improves system efficiency.
High Current-Carrying Capacity: A continuous drain current of up to 120A, with even higher peak current capability, makes it suitable for high-power switching and driving applications.
Fast Switching Performance: Optimized gate charge and input capacitance balance switching speed with driving losses, making it suitable for medium- to high-frequency switching applications.
Excellent Thermal Performance: The D2PAK (TO-263) package provides a large exposed thermal pad, facilitating heat transfer to the PCB or heatsink, and supports a maximum power dissipation of 405W.
High Voltage Rating: A drain-to-source breakdown voltage of 100V makes it suitable for 48V/60V-level industrial bus systems and automotive electrical systems.
Wide Junction Temperature Range: Supports junction temperatures from -55°C to 175°C, ensuring stable operation in high-temperature and harsh environments.
Robust Gate Tolerance: A gate-source voltage range of ±20V provides good immunity against gate noise and overshoot.
Industrial Switching Power Supplies: Used for synchronous rectification and main power switching in communication power supplies and server power supplies.
Motor Drives and Inverters: High-current H-bridge or half-bridge drives for brushless DC motor controllers, industrial inverters, and power tools.
Automotive Electrical Systems: Main switches for onboard DC-DC converters, electric pump/fan drives, and battery management systems.
New Energy and Energy Storage: Power switching in solar inverters and energy storage converters (PCS).
High-Current Load Switches: Used for power distribution, hot-swap protection, and solid-state relay power control.
The PSMN4R8-100BSEJ is an excellent high-voltage, high-current power MOSFET that achieves an outstanding balance between low on-resistance, high current capability, and superior thermal management. Its rugged D2PAK package and wide-temperature operating characteristics enable it to handle power conversion and driving tasks in industrial, automotive, and energy sectors that demand high efficiency and reliability, making it a preferred power switching device for high-power-density designs.
Industry Information
