Home > Industry Information > IQDH45N04LM6SCATMA1
The IQDH45N04LM6SCATMA1 is a high-performance single N-channel MOSFET belonging to the discrete semiconductor products category, specifically the Transistors/FETs/MOSFETs/Single FETs segment. Developed by Infineon Technologies under its OptiMOS™ 6 series, it is engineered to deliver efficient power switching performance, making it ideal for applications that demand reliable current handling, low power loss, and stable operation across a wide temperature range.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Mfr:Infineon Technologies
Series:OptiMOS™ 6
Packaging:Tape & Reel
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 20 V
Power Dissipation (Max):3W (Ta), 333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
N-Channel MOSFET Design:As an N-channel MOSFET, it enables efficient current flow when a positive gate voltage is applied, making it suitable for high-side and low-side switching applications in power electronics systems.
Advanced OptiMOS™ 6 Technology:Leveraging Infineon’s OptiMOS™ 6 technology, the device offers low on-resistance(a key attribute of the series) and reduced switching losses, contributing to higher overall system efficiency.
Controlled Input Capacitance: With a maximum input capacitance (Ciss) of 12000 pF @ 20 V, it balances switching speed and drive requirements, allowing for stable gate control while minimizing the impact of capacitance on high-frequency operation.
High Power Dissipation Capacity:The maximum power dissipation of 3W (at ambient temperature,Ta) and 333W (at case temperature,Tc) ensures the device can handle significant power loads without overheating, supporting reliable operation in high-power applications.
Compact Surface Mount Packaging:The 8-PowerWDFN surface mount package combines a small footprint with efficient thermal performance, enabling space-saving designs on PCBs while ensuring effective heat dissipation to maintain device performance.
In summary, the IQDH45N04LM6SCATMA1 N-channel MOSFET from Infineon’s OptiMOS™ 6 series excels in efficiency, power handling, and environmental robustness. With its advanced technology, wide operating range, and compact packaging, it finds valuable application in automotive, industrial, consumer, and renewable energy sectors, providing a reliable solution for high-performance power switching needs in diverse electronic systems.
Industry Information