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The IPW65R041CFD is a high-performance discrete semiconductor product belonging to the Transistors - FETs (Field-Effect Transistors) category. Developed with advanced trench gate technology, it is specifically designed to deliver efficient power management in various electronic systems. As a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), it stands out for its ability to handle high voltage and current levels while maintaining low on-resistance, making it a reliable choice for power conversion and switching applications. Housed in a robust package, it is engineered to withstand harsh operating conditions, ensuring long-term stability and performance in demanding environments.
Manufacturer:Infineon
Product Category:MOSFETs
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-247-3
Transistor Polarity:N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage:650 V
Id - Continuous Drain Current: 68.5 A
Rds On - Drain-Source Resistance:37 mOhms
Vgs - Gate-Source Voltage:- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:3.5 V
Qg - Gate Charge:300 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:500 W
High Efficiency:Thanks to its low on-resistance (RDS(on)) and advanced trench gate design, the IPW65R041CFD achieves high efficiency in power conversion and switching operations. Reduced conduction losses translate to less energy waste, making it ideal for energy-sensitive applications.
Fast Switching Speed:The transistor exhibits fast switching characteristics, with quick turn-on and turn-off times. This allows it to efficiently handle high-frequency switching in power electronics, reducing switching losses and improving the overall performance of the system.
Robust Thermal Performance:Designed with excellent thermal conductivity, the IPW65R041CFD efficiently dissipates heat, enabling it to operate at high power levels without overheating. Its robust thermal management ensures stability even in high-temperature environments, enhancing the reliability of the entire electronic system.
High Voltage and Current Handling:Combining a high VDS of 650 V with a high continuous drain current of 75 A, it is capable of managing large power loads, making it suitable for heavy-duty applications in industrial and automotive systems.
The IPW65R041CFD is a high-performance N-channel MOSFET that excels in high-voltage, high-current power management applications. With its low on-resistance, fast switching speed, robust thermal performance, and high voltage/current handling capabilities, it is well-suited for a wide range of applications, including power supplies, industrial motor drives, renewable energy systems, and automotive electronics. As the demand for efficient and reliable power conversion continues to grow across various industries, the IPW65R041CFD is poised to remain a key component in enabling advanced power management solutions, contributing to the development of more energy-efficient and high-performance electronic systems.
Industry Information