Home > Industry Information > Introduction To NVMFD5C478NWFT1G
NVMFD5C478NWFT1G is a dual N-channel power MOSFET array manufactured by onsemi. It features compact packaging, excellent electrical performance and automotive-grade reliability for high-efficiency switching applications.
Category:Discrete Semiconductor Products,Transistors,FETs,MOSFETs,FET, MOSFET Arrays
Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 10V
Manufacturer:onsemi
Input Capacitance (Ciss) (Max) @ Vds :325pF @ 25V
Packaging:Tape & Reel
Power - Max :3.1W (Ta), 23W (Tc)
Part Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Technology:MOSFET (Metal Oxide)
Configuration:2 N-Channel (Dual)
Qualification:AEC-Q101
Drain to Source Voltage (Vdss):40V
Mounting Type:Surface Mount, Wettable Flank
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta), 27A (Tc)
Package / Case:8-PowerTDFN
Rds On (Max) @ Id, Vgs:17mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 20µA
Dual-channel Design:This device integrates two N-channel MOSFETs into a single chip. It saves PCB layout space and greatly simplifies the design of dual-switch circuit systems.
Low On-resistance:The component has a low maximum on-resistance of 17mOhm under standard test conditions. It effectively reduces circuit conduction loss and improves overall energy conversion efficiency.
Fast Switching:It features low gate charge and low input capacitance to realize rapid switching action. This characteristic lowers switching loss and adapts to high-frequency operating scenarios.
High Current Capacity:The MOSFET array supports high continuous drain current under different temperature conditions. It fully meets the high-current driving requirements of various power electronic circuits.
Automotive Grade:The device passes the strict AEC-Q101 automotive reliability certification. It can adapt to the harsh and demanding working environment of automotive electronic systems.
Compact Packaging:It adopts miniaturized 8-PowerTDFN surface-mount packaging with wettable flank. It supports automated assembly production and possesses excellent heat dissipation performance.
Solenoid Driving:This MOSFET array is widely used to drive automotive fuel injection valves and ABS brake solenoids. It provides stable and fast switching control to ensure precise operation of vehicle systems.
Motor Control:It is suitable for driving automotive wiper motors, seat adjustment motors and cooling fan motors. It achieves efficient and stable start-stop and speed regulation of small vehicle motors.
Circuit Switching:It acts as high-side and low-side power switches for automotive ECU and body electronic modules. It realizes reliable power gating and load switching for vehicle electronic circuits.
Battery Protection:The device is applied in automotive battery management systems. It effectively realizes reverse connection and over-current protection to protect the safety of vehicle electrical systems.
H-bridge Circuits:It can be integrated into the H-bridge drive circuits of automotive miniature actuators. It supports flexible forward and reverse rotation control of small vehicle actuators.
Power Supply Units:It serves as the core switching component of automotive auxiliary switching power supplies. It optimizes power conversion efficiency and reduces operating heat generation of power modules.
NVMFD5C478NWFT1G integrates superior electrical performance and automotive-grade reliability with a compact integrated design. It is a high-cost-performance power MOSFET array, widely applicable to automotive and industrial high-efficiency switching control scenarios.
Industry Information
