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The SI4174DY-T1-GE3 is a high-performance, surface-mount N-channel TrenchFET® power MOSFET from Vishay Siliconix. Utilizing advanced TrenchFET technology, this device delivers exceptionally low on-resistance and fast switching performance in a compact industry-standard SO-8 package. With a 30V drain-source voltage rating and continuous current capability up to 17A, it is ideally suited for load switching, power management, and DC-DC conversion applications in computing, communications, and industrial systems.
Category:Discrete Semiconductor Products;Transistors;FETs, MOSFETs;Single FETs, MOSFETs
Mfr:Vishay Siliconix
Series:TrenchFET®
Packaging:Tape & Reel (TR);Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:985 pF @ 15 V
Power Dissipation (Max):2.5W (Ta), 5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
Base Product Number:SI4174
Low On-Resistance: Ultra-low 9.5 mΩ maximum Rds(on) minimizes conduction losses and improves efficiency in high-current applications.
TrenchFET® Technology: Advanced trench-based structure optimizes the trade-off between on-resistance and gate charge for superior switching performance.
Fast Switching Speed: Low gate charge (27 nC) and input capacitance enable high-frequency operation with minimal switching losses.
High Current Capability: Supports continuous drain current up to 17A, suitable for demanding power management applications.
Wide Drive Voltage Range: Optimized for 4.5V and 10V gate drive, compatible with both logic-level and standard gate drive circuits.
Avalanche Ruggedness: Designed to withstand avalanche energy, providing robustness in inductive switching applications.
Industry-Standard SO-8 Package: Compact, surface-mount package enables high-density PCB layouts and automated assembly.
DC-DC Converters: Serves as the primary switching element in buck, boost, and buck-boost converters for point-of-load power supplies.
Load Switches: Provides efficient power switching for peripheral devices, memory modules, and subsystem power rails in computing and communications equipment.
Power Management in Servers: Used in server power distribution, hot-swap controllers, and OR-ing applications requiring low-loss current path.
Battery Protection Circuits: Functions as a protection switch in battery management systems for lithium-ion battery packs in portable devices and power tools.
Motor Control: Applied in low-voltage motor drives, fans, and pumps requiring efficient switching and compact size.
Power Supply OR-ing: Used in redundant power supply systems for load sharing and protection against reverse current flow.
LED Lighting: Serves as a switching element in LED drivers and dimming circuits for efficient current control.
The SI4174DY-T1-GE3 from Vishay Siliconix is a high-performance N-channel TrenchFET® MOSFET that combines ultra-low 9.5 mΩ on-resistance, 30V voltage rating, and 17A current capability in a compact SO-8 package. Its fast switching characteristics, low gate charge, and rugged design make it an ideal choice for DC-DC converters, load switching, power management, and battery protection applications where efficiency, reliability, and space savings are critical design requirements.
Industry Information
