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The SI7850DP-T1-GE3 is an N-channel power MOSFET from Vishay Siliconix's TrenchFET® series, utilizing the advanced PowerPAK® SO-8 package. This device features a drain-source voltage rating of 60V and a continuous drain current capability of 6.2A. With its extremely low on-resistance and excellent switching characteristics, it serves as an ideal choice for high-efficiency power conversion and motor drive applications.
Category:Discrete Semiconductor Products;Transistors;FETs, MOSFETs;Single FETs, MOSFETs
Mfr:Vishay Siliconix
Series:TrenchFET®
Packaging:Tape & Reel (TR);Cut Tape (CT);Digi-Reel®
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
Base Product Number:SI7850
Extremely Low On-Resistance: Maximum Rds(on) of 22mΩ significantly reduces conduction losses
Excellent Switching Performance: Low gate charge of 27nC ensures fast switching speeds
Advanced Packaging Technology: PowerPAK® SO-8 package provides excellent thermal performance and power density
High Voltage Capability: 60V drain-source voltage suitable for industrial-grade applications
Enhanced Reliability: TrenchFET® technology ensures stable long-term performance
Wide Safe Operating Area: Supports 6.2A continuous current output
Industrial Temperature Range: Operating junction temperature from -55°C to 150°C
DC-DC Converters: Synchronous rectification and power stage design
Motor Drives: DC motor and stepper motor drives
Power Management: Load switches and power distribution
Industrial Control: PLC output modules and automation equipment
Automotive Systems: Pump control and auxiliary drives
The SI7850DP-T1-GE3 is a high-performance N-channel power MOSFET. Its outstanding electrical characteristics and advanced packaging technology make it excel in power conversion applications. The device's low on-resistance and fast switching characteristics ensure efficient power handling capability, while the wide temperature range guarantees reliable operation in various environments. Whether used in industrial control systems or automotive electronic equipment, the SI7850DP-T1-GE3 delivers excellent power switching solutions, demonstrating Vishay's technical expertise in the power semiconductor field.
Industry Information
