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IRF9328PBF

Auth: Date:2025/11/18 Source:WECHIP Visit:8 Related Key Words: efficiency durability stability low-voltage

I.Overview of IRF9328PBF

The IRF9328PBF is a P-Channel power MOSFET manufactured by Infineon Technologies, belonging to the HEXFET® series. This device comes in an 8-pin SOIC package, featuring a drain-source voltage rating of 30V and a continuous drain current capability of 12A. With its extremely low on-resistance and excellent switching characteristics, this MOSFET is particularly suitable for applications such as power management, motor drives, and power switching.

 

II.IRF9328PBF Parameter

Category:Discrete Semiconductor Products;Transistors;FETs, MOSFETs;Single FETs, MOSFETs

Mfr:Infineon Technologies

Series:HEXFET®

Packaging:Tube

FET Type:P-Channel

Technology:MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):30 V

Current - Continuous Drain (Id) @ 25°C12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V

Rds On (Max) @ Id, Vgs:11.9mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V

Vgs (Max):±20V

Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 25 V

Power Dissipation (Max):2.5W (Ta)

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Supplier Device Package:8-SO

Package / Case:8-SOIC (0.154", 3.90mm Width)

 

III.IRF9328PBF Main Characteristics

Extremely Low On-Resistance: Maximum Rds(on) of 11.9mΩ significantly reduces conduction losses and improves system efficiency.

Excellent Switching Performance: Low gate charge of 52nC ensures fast switching speeds, suitable for high-frequency applications.

Enhanced Reliability: Utilizes advanced HEXFET technology, providing excellent durability and stability.

Wide Safe Operating Area: Supports 12A continuous current, meeting high-current application requirements.

Optimized Gate Drive: Low gate threshold voltage of 2.4V facilitates direct interfacing with low-voltage controllers.

Strong Thermal Performance: SOIC package offers good thermal characteristics.

Industrial Temperature Range: Operating temperature from -55°C to 150°C ensures stable performance in harsh environments.

 

IV.IRF9328PBF Application 

Power Management Systems: DC-DC converters, load switches, power reverse protection.

Motor Drive Circuits: Motor control for robotics, drones, and industrial automation equipment.

Battery-Powered Devices: Power switching in electric tools and portable devices.

Automotive Electronic Systems: Auxiliary drive circuits for power seats, window motors, etc.

Industrial Control Systems: PLC output modules, high-current switching circuits.

 

V.Conclusion

The IRF9328PBF is a high-performance P-Channel power MOSFET. Its outstanding electrical characteristics, including extremely low on-resistance, fast switching speed, and excellent thermal performance, make it an ideal choice for various power management applications. The HEXFET technology used in the device ensures high reliability and stability, while the compact SOIC package meets the requirements of modern electronic devices with strict space constraints. Whether used in complex industrial control systems or simple power switching circuits, the IRF9328PBF provides efficient and reliable power switching solutions.


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