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The FDS3170N7 is a high-performance discrete semiconductor product classified under Transistors, FETs, MOSFETs, specifically Single FETs, MOSFETs. Developed by Fairchild Semiconductor as part of its PowerTrench® series, it is engineered for reliable performance in power management and switching applications. Featuring a surface-mount 8-SOIC package, it is well-suited for space-constrained electronic designs that demand efficient power control and stable operation.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Mfr:Fairchild Semiconductor
Series:PowerTrench®
Packaging:Bulk
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2714 pF @ 50 V
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
High Voltage and Current Handling Capacity:With a Drain to Source Voltage (Vdss) of 100V and a Continuous Drain Current (Id) of 6.7A @ 25°C, the FDS3170N7 can efficiently manage high-power loads, making it ideal for applications requiring robust power switching and regulation.
Optimized Drive Voltage for Low On-Resistance:It operates with drive voltages of 6V (Max Rds On) and 10V (Min Rds On), ensuring low on-resistance during operation. This minimizes power loss, enhances energy efficiency,and reduces heat generation in the circuit.
Wide Gate Voltage Tolerance:The maximum gate-source voltage (Vgs) of ±20V provides a high level of protection against voltage spikes, preventing damage to the MOSFET and ensuring stable performance even in variable voltage environments.
Controlled Input Capacitance:With a maximum Input Capacitance (Ciss) of 2714 pF @ 50V, the device offers predictable switching behavior.This helps in reducing switching delays and improving the overall response time of the circuit,which is crucial for high-frequency applications.
Reliable Power Dissipation:Boasting a maximum power dissipation of 3W (Ta), the FDS3170N7 can handle significant power levels without overheating.This ensures long-term reliability and stability,even in high-load operating conditions.
Compact Surface-Mount Package:The 8-SOIC package (0.154", 3.90mm Width) is compact and compatible with surface-mount technology (SMT).This allows for space-efficient PCB design,supports automated assembly processes,and reduces manufacturing costs.
In summary, the FDS3170N7 is a versatile and high-performance N-Channel MOSFET from Fairchild Semiconductor’s PowerTrench® series.As an active and well-engineered component, it continues to deliver efficient power control solutions, meeting the demands of modern electronic design.
Industry Information