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TC2320TG-G

Auth: Date:2025/9/16 Source:WECHIP Visit:12 Related Key Words: foundational inherently bidirectional configuration

.Overview of TC2320TG-G

The TC2320TG-G is a discrete semiconductor product belonging to the FET, MOSFET Arrays category, developed and manufactured by Microchip Technology. It is designed with advanced MOSFET technology, featuring a compact form factor and reliable performance to meet various electronic circuit requirements.

 

.TC2320TG-G Parameter

Category:Discrete Semiconductor Products,Transistors,FETs,MOSFETs,FET, MOSFET Arrays

Manufacturer:Microchip Technology

Packaging:Tape & Reel

Part Status:Active

Technology:MOSFET (Metal Oxide)

Configuration:N and P-Channel

Rds On (Max) @ Id, Vgs:7Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:2V @ 1mA

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Package / Case:8-SOIC (0.154", 3.90mm Width)

 

 

.TC2320TG-G Main Characteristics

Advanced MOSFET Technology Foundation:Built on Metal Oxide MOSFET technology, which enables efficient electron mobility between terminals. This foundational design inherently reduces power consumption, a key advantage for energy-sensitive electronic systems.

Dual-Channel Configuration Flexibility:Features both N and P-Channel MOSFETs in a single array. This dual configuration allows engineers to design more compact circuits for diverse needs, including bidirectional switching, push-pull amplifiers, and complementary logic circuits.

Low On-State Resistance for Efficiency:Delivers a maximum Rds On of 7Ohm under typical operating conditions (1A current, 10V gate-source voltage). Low on-state resistance minimizes power dissipation during conduction, improving overall circuit efficiency and reducing heat generation.

Reliable Gate Control Threshold:Has a maximum gate-source threshold voltage (Vgs(th)) of 2V at 1mA drain current. This well-defined threshold ensures consistent and predictable turn-on/turn-off behavior, preventing unintended switching and enhancing circuit stability.

PCB-Friendly Packaging:Utilizes a surface mount 8-SOIC package (3.90mm width, 0.154"). The surface mount design simplifies automated assembly, while the compact form factor saves valuable board space in dense electronic layouts.

 

.TC2320TG-G Application 

Portable Electronic Power Management:Ideal for power management units (PMUs) in smartphones, tablets, and laptops.Its low power consumption and small 8-SOIC package align with the miniaturization and battery-life demands of portable devices.

Industrial Control Switching:Applied in switching circuits for industrial automation systems. It drives components like small motors, solenoid valves, and relays, leveraging its efficient switching and wide temperature tolerance to handle industrial operating conditions.

Audio Amplification Systems:Used in low-to-mid power audio amplifiers (e.g., portable speakers, headphone amps). The low Rds On reduces signal distortion, while the dual-channel configuration supports balanced audio signal processing.

Battery-Powered Device Design:A key component in battery-operated gadgets such as wireless sensors, wearables, and handheld tools. Its minimal power dissipation extends battery runtime, a critical requirement for devices relying on limited energy storage.

 

.Conclusion

In summary, the TC2320TG-G is a high-performance MOSFET array with excellent electrical characteristics and versatile applications. Its compact package, wide temperature range, and efficient performance make it a valuable component in various electronic systems.

 

 


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